[CP2K-user] Correct E adsorption calculation on semiconductive surface
DMITRII Drugov
dresear... at gmail.com
Mon Jun 28 05:46:39 UTC 2021
Hi guys, could you please give me advice to improve my current settings for
E ads calculation of organic molecule on semiconductive surface. I am
afraid that my calculation can be wrong because Eads on graphite (basal
plane) of -0.6 eV < Eads on silicon (001) of -0.8 eV, where graphite has
higher electric conductivity with smaller band gap. According to my
thinking, higher surface polarisability gives better better Eadsorption due
to strong VdW interactions (dipole-dipole formation). However, graphite
basal plane is smother than Si(001) which is like saw-type surface.
Graphite here:
&GLOBAL
PROJECT Graphite_optimisation_larger_cell
RUN_TYPE GEO_OPT
PRINT_LEVEL MEDIUM
!EXTENDED_FFT_LENGTHS
&END GLOBAL
&FORCE_EVAL
METHOD QS
&DFT
BASIS_SET_FILE_NAME BASIS_MOLOPT
POTENTIAL_FILE_NAME GTH_POTENTIALS
CHARGE 0
MULTIPLICITY 1
&MGRID
CUTOFF 800
NGRIDS 5
REL_CUTOFF 70
&END MGRID
&QS
EPS_DEFAULT 1.0E-14
!WF_INTERPOLATION ASPC
&END QS
&SCF
SCF_GUESS ATOMIC
EPS_SCF 1.0E-6
MAX_SCF 300
&OT
MINIMIZER CG
PRECONDITIONER FULL_KINETIC
# ENERGY_GAP 0.01
&END OT
&OUTER_SCF
EPS_SCF 1E-6
MAX_SCF 300
&END
!CHOLESKY INVERSE
!ADDED_MOS 100
!&SMEAR ON
! METHOD FERMI_DIRAC
! ELECTRONIC_TEMPERATURE [K] 1000
! &END SMEAR
!&DIAGONALIZATION
! ALGORITHM STANDARD
!&END DIAGONALIZATION
!&MIXING
! METHOD BROYDEN_MIXING
!ALPHA 0.4
!NBROYDEN 8
!&END MIXING
&END SCF
&XC
&XC_FUNCTIONAL
&PBE
&END PBE
&END XC_FUNCTIONAL
&vdW_POTENTIAL
DISPERSION_FUNCTIONAL PAIR_POTENTIAL
&PAIR_POTENTIAL
PARAMETER_FILE_NAME dftd3.dat
TYPE DFTD3
REFERENCE_FUNCTIONAL PBE
R_CUTOFF 15.0
&END PAIR_POTENTIAL
&END vdW_POTENTIAL
&END XC
&POISSON
PERIODIC xy
POISSON_SOLVER ANALYTIC
&END POISSON
&END DFT
&SUBSYS
&CELL
ABC 14.80620 17.09680 50.0
ALPHA_BETA_GAMMA 90.0 90.0 90.0
PERIODIC xy
&END CELL
&COORD
&END COORD
&KIND Au
BASIS_SET DZVP-MOLOPT-SR-GTH
POTENTIAL GTH-PBE-q11
&END KIND
&KIND F
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q7
&END KIND
&KIND O
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q6
&END KIND
&KIND C
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q4
&END KIND
&KIND Si
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q4
&END KIND
&KIND S
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q6
&END KIND
&KIND N
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q5
&END KIND
&KIND Na
BASIS_SET DZVP-MOLOPT-SR-GTH
POTENTIAL GTH-PBE-q9
&END KIND
&END SUBSYS
&END FORCE_EVAL
&MOTION
!&CONSTRAINT
!&FIXED_ATOMS
!COMPONENTS_TO_FIX XYZ
!LIST 1..96
!&END FIXED_ATOMS
!&END CONSTRAINT
!&GEO_OPT
! TYPE MINIMIZATION
! MAX_DR 1.0E-03
! MAX_FORCE 1.0E-03
! RMS_DR 1.0E-03
! RMS_FORCE 1.0E-03
! MAX_ITER 300
! OPTIMIZER CG
! &CG
! MAX_STEEP_STEPS 0
! RESTART_LIMIT 9.0E-01
! &END CG
!&END GEO_OPT
!&END MOTION
&GEO_OPT
OPTIMIZER LBFGS
MAX_ITER 300
&END GEO_OPT
&END MOTION
Silicon (001) here:
&GLOBAL
PROJECT Si100_optimisation_larger_cell
RUN_TYPE GEO_OPT
PRINT_LEVEL MEDIUM
!EXTENDED_FFT_LENGTHS
&END GLOBAL
&FORCE_EVAL
METHOD QS
&DFT
BASIS_SET_FILE_NAME BASIS_MOLOPT
POTENTIAL_FILE_NAME GTH_POTENTIALS
CHARGE 0
MULTIPLICITY 1
&MGRID
CUTOFF 800
NGRIDS 5
REL_CUTOFF 70
&END MGRID
&QS
EPS_DEFAULT 1.0E-14
!WF_INTERPOLATION ASPC
&END QS
&SCF
SCF_GUESS ATOMIC
EPS_SCF 1.0E-6
MAX_SCF 300
&OT
MINIMIZER CG
PRECONDITIONER FULL_KINETIC
# ENERGY_GAP 0.01
&END OT
&OUTER_SCF
EPS_SCF 1E-6
MAX_SCF 300
&END
!CHOLESKY INVERSE
!ADDED_MOS 100
!&SMEAR ON
! METHOD FERMI_DIRAC
! ELECTRONIC_TEMPERATURE [K] 1000
! &END SMEAR
!&DIAGONALIZATION
! ALGORITHM STANDARD
!&END DIAGONALIZATION
!&MIXING
! METHOD BROYDEN_MIXING
!ALPHA 0.4
!NBROYDEN 8
!&END MIXING
&END SCF
&XC
&XC_FUNCTIONAL
&PBE
&END PBE
&END XC_FUNCTIONAL
&vdW_POTENTIAL
DISPERSION_FUNCTIONAL PAIR_POTENTIAL
&PAIR_POTENTIAL
PARAMETER_FILE_NAME dftd3.dat
TYPE DFTD3
REFERENCE_FUNCTIONAL PBE
R_CUTOFF 15.0
&END PAIR_POTENTIAL
&END vdW_POTENTIAL
&END XC
&POISSON
PERIODIC xy
POISSON_SOLVER ANALYTIC
&END POISSON
&END DFT
&SUBSYS
&CELL
ABC 21.72116 21.72116 50
ALPHA_BETA_GAMMA 90.0 90.0 90.0
PERIODIC xy
&END CELL
&COORD
&END COORD
&KIND Au
BASIS_SET DZVP-MOLOPT-SR-GTH
POTENTIAL GTH-PBE-q11
&END KIND
&KIND F
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q7
&END KIND
&KIND O
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q6
&END KIND
&KIND C
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q4
&END KIND
&KIND S
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q6
&END KIND
&KIND N
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q5
&END KIND
&KIND Si
BASIS_SET TZVP-MOLOPT-GTH
POTENTIAL GTH-PBE-q4
&END KIND
&KIND Na
BASIS_SET DZVP-MOLOPT-SR-GTH
POTENTIAL GTH-PBE-q9
&END KIND
&END SUBSYS
&END FORCE_EVAL
&MOTION
!&CONSTRAINT
!&FIXED_ATOMS
!COMPONENTS_TO_FIX XYZ
!LIST 1..96
!&END FIXED_ATOMS
!&END CONSTRAINT
!&GEO_OPT
!TYPE MINIMIZATION
!MAX_DR 1.0E-03
!MAX_FORCE 1.0E-03
!RMS_DR 1.0E-03
!RMS_FORCE 1.0E-03
!MAX_ITER 300
!OPTIMIZER CG
!&CG
! MAX_STEEP_STEPS 0
! RESTART_LIMIT 9.0E-01
!&END CG
!&END GEO_OPT
!&END MOTION
&GEO_OPT
OPTIMIZER LBFGS
MAX_ITER 300
&END GEO_OPT
&END MOTION
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