Hi CP2K community,<br /><br />I am studying Be substituting Ga in wurtzite GaN using CP2K/GPW with HSE + ADMM. <div><br /></div><div>Based on previous resources, it is possible to obtain three different configurations for Be in GaN.</div><div>C3v: one long axial Be-N bond</div><div>pseudo-C3v: one long basal Be-N bond</div><div>C2v: distortion of the two adjacent acceptor-nitrogen bonds, not a single bond is significantly long</div><div><br /></div><div>I am trying to locate the shallow C2v like acceptor configuration, but so far my relaxations either converge to the deep C3v or pseudo-C3v polaronic states.<div><div><br /></div><div>I have already found stable/converged neutral C3v and pseudo-C3v branches. In the 72-atom cell at α = 0.335, the pseudo-C3v branch is with one long basal Be-N bond around 2.56 Å. The C3v branch has one long axial Be-N bond around 2.59 Å. These two states can be obtained easily where the initial structure will be by distorting the Be atom such that there will be a long basal or axial bond. </div><div><br /></div><div>The shallow C2v state of Be_Ga acceptor results from the distortion of the two adjacent acceptor-nitrogen bonds, having the C2v symmetry of the atomic structure. The hole in this case is anisotropically delocalized in the (0001) wurtzite plane of GaN.</div><div><br /></div><div>Hence, for the C2v search, I am giving an initial structure by distorting the Be atom along a bisector direction involving the axial N neighbor and one basal N neighbor. However, it starts to collapse to the C3v/pseudo-C3v state.<br /><br />My question is: does anyone have advice on how to better initialize or constrain the search for the shallow C2v acceptor state in CP2K? Is it possible to obtain C2v state? In particular, I would appreciate suggestions on:<br /><br />1. Better initial distortion pattern for C2v in wurtzite GaN<br />2. Better spin/localization initialization for the hole<br />3. Any CP2K-specific GEO_OPT/HSE/ADMM settings that help avoid collapse into C3v or pseudo-C3v<br /><br />Any guidance would be very helpful. Thank you!</div></div></div><div><br /></div><div>Ps:</div><div>My current setup is:<br /><br />System: Be_Ga in wurtzite GaN<br />Cell sizes tested: 72 atoms, moving to 108 and 300 atoms<br />Run type: GEO_OPT, fixed cell<br />Functional: HSE-style screened hybrid<br />alpha = 0.335<br />omega = 0.1058354422 bohr^-1 # approximately 0.2 Å^-1<br />MGRID cutoff = 600 Ry<br />REL_CUTOFF = 60 Ry<br />SCF: OT-CG, FULL_ALL preconditioner<br />q = 0: UKS TRUE, MULTIPLICITY 2<br />q = -1: UKS FALSE<br />HFX: four-center HFX + ADMM<br /><br />Basis/pseudopotential setup:<br /><br />Ga: DZVP-MOLOPT-PBE0-GTH-q13 + admm-dz-q13, GTH-PBE0-q13<br />N : DZVP-MOLOPT-PBE0-GTH-q5 + admm-dz-q5, GTH-PBE0-q5<br />Be: DZVP-MOLOPT-PBE0-GTH-q4 + admm-dz-q4, GTH-PBE0-q4<br /></div>
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