<div dir="ltr"><div>Dear Hongyang,</div><div><br></div><div>O yes. I such cases, if nothing else helped, I applied an extremely high electronic smearing, for example about 5000 K. Once the electronic structure was converged at such a temperature, I restarted from the converged wavefunctions using a lower temperature (smearing). Not too much lower. Then repeat it again setting even a lower temperature. So it is a manually driven simulated annealing - a rather time-consuming procedure requiring several steps. Usually it was not possible to scale down to temperatures close to zero but for the purpose of just obtaining a charge-density difference, this may be an acceptable way.<br></div><div><br></div><div>Best regards</div><div>Martin.<br></div></div><br><div class="gmail_quote"><div dir="ltr" class="gmail_attr">so 4. 12. 2021 o 4:03 <a href="mailto:ma455...@gmail.com">ma455...@gmail.com</a> <<a href="mailto:ma455173220@gmail.com">ma455173220@gmail.com</a>> napísal(a):<br></div><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;border-left:1px solid rgb(204,204,204);padding-left:1ex">Dear Martin,<div><br></div><div>Thanks for your suggestion.</div><div>But what I want to do here actually is just do a single point non-sc calculation. Because this geometry is extracted from P doped system and I want to calculate the charge density difference so I need to obtain the charge density cube files seperately for both Si and P extracted from P doped Si.</div><div><br></div><div>Best,</div><div>Hongyang<br><br></div><div class="gmail_quote"><div dir="auto" class="gmail_attr">在2021年12月3日星期五 UTC+11 23:32:24<<a href="mailto:konop...@gmail.com" target="_blank">konop...@gmail.com</a>> 写道:<br></div><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;border-left:1px solid rgb(204,204,204);padding-left:1ex"><div dir="ltr"><div>Dear Hongyang,</div><div><br></div><div>One reason of convergence difficulties may be the geometry that is far from a relaxed one. In such cases I try to set a very loose SCF criterion (in the initial stage of the relaxation). After some number of geometry steps, I tighten the SCF criterion. </div><div><br></div><div>Best regards</div><div>Martin.<br></div></div><br><div class="gmail_quote"><div dir="ltr" class="gmail_attr">pi 3. 12. 2021 o 1:25 <a rel="nofollow">ma455...@gmail.com</a> <<a rel="nofollow">ma455...@gmail.com</a>> napísal(a):<br></div><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;border-left:1px solid rgb(204,204,204);padding-left:1ex"></blockquote></div><div class="gmail_quote"><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;border-left:1px solid rgb(204,204,204);padding-left:1ex">Hi all,<div><br></div><div>I'm new in using CP2K.</div><div>I'm currently calculating pure silicon with one vacancy, but the SCF calcualtion is very hard to converge. Could you please provide me some suggestions on improving this issue?</div><div><br></div><div>Best,</div><div>Hongyang</div>
<p></p></blockquote></div><div class="gmail_quote"><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;border-left:1px solid rgb(204,204,204);padding-left:1ex">
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