SCF does not converge in calculation of defects in bulk silicon
Matt W
mattwa... at gmail.com
Tue May 29 08:19:35 UTC 2018
You will also have to increase the size of the system (or use k-points).
The basis set is also not good enough for production runs (maybe try the
molopt basis sets).
Matt
On Tuesday, May 29, 2018 at 7:59:42 AM UTC+1, Tianshu Jiang in Beijing
wrote:
>
> The problem has been solved by increase the threshold value in SCF
> progress.
>
>
> 在 2018年5月28日星期一 UTC+8上午11:05:00,Tianshu Jiang in Beijing写道:
>>
>> Hello everyone,
>> I did an exercise followed the tutorial in defects in Si
>> <https://www.cp2k.org/exercises:2017_uzh_cmest:defects_in_silicon?s[]=vacancy>,
>> but when I dropped an atom in the coordinate part in the input file, the
>> SCF did not converge.
>> Does anyone can give any advice? I would appreciate for your help ! Here
>> is my input file
>>
>> &GLOBAL
>> PROJECT silicon8
>> RUN_TYPE ENERGY
>> PRINT_LEVEL MEDIUM
>> &END GLOBAL
>> &FORCE_EVAL
>> METHOD Quickstep
>> STRESS_TENSOR ANALYTICAL
>> &DFT
>> BASIS_SET_FILE_NAME BASIS_SET
>> POTENTIAL_FILE_NAME POTENTIAL
>> &POISSON
>> PERIODIC XYZ
>> &END POISSON
>> &SCF
>> SCF_GUESS ATOMIC
>> EPS_SCF 1.0E-8
>> MAX_SCF 500
>> &END SCF
>> &XC
>> &XC_FUNCTIONAL PBE
>> &END XC_FUNCTIONAL
>> &END XC
>> &END DFT
>> &SUBSYS
>> &KIND Si
>> ELEMENT Si
>> BASIS_SET DZVP-GTH-PBE
>> POTENTIAL GTH-PBE
>> &END KIND
>> &CELL
>> ABC 5.430697500 5.430697500 5.430697500
>> PERIODIC XYZ
>> &END CELL
>> &COORD
>> SCALED
>> Si 0 0 0
>> Si 0 2/4 2/4
>> #Si 2/4 2/4 0
>> Si 2/4 0 2/4
>> Si 3/4 1/4 3/4
>> Si 1/4 1/4 1/4
>> Si 1/4 3/4 3/4
>> Si 3/4 3/4 1/4
>> &END COORD
>> &END SUBSYS
>> &END FORCE_EVAL
>>
>>
>>
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