SCF does not converge in calculation of defects in bulk silicon

[Tianshu Jiang in Beijing]

Hello everyone,
I did an exercise followed the tutorial in defects in Si 
<https://www.cp2k.org/exercises:2017_uzh_cmest:defects_in_silicon?s[]=vacancy>, 
but when I dropped an atom in the coordinate part in the input file, the 
SCF did not converge.
Does anyone can give any advice? I would appreciate for your help ! Here is 
my input file 

&GLOBAL
  PROJECT silicon8
  RUN_TYPE ENERGY
  PRINT_LEVEL MEDIUM
&END GLOBAL
&FORCE_EVAL
  METHOD Quickstep
  STRESS_TENSOR ANALYTICAL
  &DFT
    BASIS_SET_FILE_NAME  BASIS_SET
    POTENTIAL_FILE_NAME  POTENTIAL
    &POISSON
      PERIODIC XYZ
    &END POISSON
    &SCF
      SCF_GUESS ATOMIC
      EPS_SCF 1.0E-8
      MAX_SCF 500
    &END SCF
    &XC
      &XC_FUNCTIONAL PBE
      &END XC_FUNCTIONAL
    &END XC
  &END DFT
  &SUBSYS
    &KIND Si
      ELEMENT   Si
      BASIS_SET DZVP-GTH-PBE
      POTENTIAL GTH-PBE
    &END KIND
    &CELL
      ABC 5.430697500 5.430697500 5.430697500
      PERIODIC XYZ
    &END CELL
    &COORD
      SCALED
      Si    0    0    0
      Si    0    2/4  2/4
     #Si    2/4  2/4  0
      Si    2/4  0    2/4
      Si    3/4  1/4  3/4
      Si    1/4  1/4  1/4
      Si    1/4  3/4  3/4
      Si    3/4  3/4  1/4
    &END COORD
  &END SUBSYS
&END FORCE_EVAL


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